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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU60/12 UHF power transistor
Product specification March 1986
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * internal matching to achieve an optimum wideband capability and high power gain. * gold metallization ensures excellent reliability. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V 12,5 f MHz 470 PL W 60 Gp dB > 4,4
BLU60/12
The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.
C % > 55
PIN CONFIGURATION
PINNING PIN 1 DESCRIPTION emitter emitter base collector emitter emitter
handbook, halfpage
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1986
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 C; f > 1 MHz Storage temperature Operating junction temperature Ptot Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max.
BLU60/12
36 V 16,5 V 4V 12 A 36 A 110 W 200 C
-65 to + 150 C
handbook, halfpage
200
MDA345
Prf (W) 150
100
II
I 50
0 0 40 80 120 160 200 Th ( C)
I Continuous operation (f > 1 MHz). II Short-time operation during mismatch (f > 1 MHz).
Fig.2 Power/temperature derating curves.
MAXIMUM THERMAL RESISTANCE Dissipation = 72 W; Tamb = 25 C From junction to mounting base (r.f. operation) From mounting base to heatsink Rth j-mb Rth mb-h max. max. 1,4 K/W 0,2 K/W
March 1986
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 100 mA Collector-emitter breakdown voltage open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain VCE = 10 V; IC = 8 A Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 Collector-flange capacitance Cre Ccf Cc hFE ESBR ICES V(BR)EBO V(BR)CEO V(BR)CBO
BLU60/12
min. min. min. max. min. min. typ. typ. typ. typ.
36 V 16,5 V 4V 44 mA 15 mJ 15 60 170 pF 100 pF 3 pF
handbook, halfpage
100
MDA336
handbook, halfpage
400
MDA337
hFE 80 VCE = 12.5 V 10 V
Cc (pF) 300
60
200 40 100 20
0 0 10 20 30 IC (A) 40
0 0 4 8 12 16 20 VCB (V)
Fig.3
D.C. current gain versus collector current; Tj = 25 C.
Fig.4
Output capacitance versus VCB; IE = ie = 0; f = 1 MHz.
March 1986
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION R.F. performance at Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION VCE V 12,5 f MHz 470 PL W 60 Gp dB > 4,4 typ. 5,5
BLU60/12
C % > 55 typ. 62
narrow band; c.w.
handbook, full pagewidth
C1 50
C3
C2
,,,, ,,,,, ,,,,
L5 C7 C12 L6 C5 D.U.T. L1 L2 C6 C4 L7 C8 L3 R1 L4 C9 L8 R2 +VCC C10
MDA338
C13 50 C11
Fig.5 Class-B test circuit at f = 470 MHz.
List of components: C1 = C13 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = C11 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = 12 pF multilayer ceramic chip capacitor(1) C4 = C5 = 8, 2 pF multilayer ceramic chip capacitor(2) C6 = C7 = 15 pF multilayer ceramic chip capacitor(1) C8 = 110 pF multilayer ceramic chip capacitor(1) C9 = 3 x 100 nF multilayer ceramic chip capacitor in parallel C10 = 2,2 F (35 V) electrolytic capacitor C12 = 5,6 pF multilayer ceramic chip capacitor(1) L1 = 34,6 stripline (17 mm x 4 mm) L2 = L5 = 25,3 stripline (6 mm x 6 mm) L3 = 45 nH; 4 turns, closely wound enamelled Cu-wire (0,5 mm); int. dia. 2,5 mm; leads 2 x 5 mm L4 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = 29,2 stripline (25,5 mm x 5 mm) L7 = 10 nH; 1 turn Cu-wire (1,0 mm); int. dia. 5 mm; leads 2 x 5 mm R1 = 1 5% (0,4 W) metal film resistor R2 = 10 5% (1,0 W) metal film resistor Notes 1. American Technical Ceramics capacitor type B or capacitor of the same quality. 2. Idem type A. March 1986 5
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
Striplines are on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,2); thickness 1/32 inch.
handbook, full pagewidth
97 mm
rivets
rivets 70 mm
Cu - straps
L8 L4 R1 R2 C8 L7 C1 C3 L3 L1 C4 C2 C5 L2 L5 C6 C7 L6 C9
+VCC C10
C12
C13
C11
MDA339
The circuit and the components are on one side of the PTFE fibre-glass board; the other side is unetched copper serving as a ground plane. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the bases to provide a direct contact between the copper on the component side and the ground plane.
Fig.6 Printed circuit board and component layout for 470 MHz class-B test circuit.
March 1986
6
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
handbook, halfpage
100 PL
MDA346
handbook, halfpage
6
MDA347
70 C (%) 60
(W) 80
Gp (dB) 5
Gp
60
40 4 20
C 50
0 0 10 20 30 PS (W) 40
3 10 30 50 70 PL (W)
40 90
Typical values; VCE = 12,5 V; f = 470 MHz; Th = 25 C () and 70 C (- - -); Rth mb-h = 0,2 K/W; class-B operation.
Typical values; VCE = 12,5 V; f = 470 MHz; Th = 25 C () and 70 C (- - -); Rth mb-h = 0,2 K/W; class-B operation.
Fig.7 Load power versus source power.
Fig.8 Power gain and efficiency versus load power.
RUGGEDNESS The BLU60/12 is capable of withstanding a full load mismatch (VSWR = 50 through all phases) up to 70 W under the following conditions; VCE = 15,5 V; f = 470 MHz; Th = 25 C; Rth mb-h = 0,2 K/W.
March 1986
7
Philips Semiconductors
Product specification
UHF power transistor
BLU60/12
handbook, halfpage
6
MDA348
handbook, halfpage
2
MDA349
Zi () 4 xi
ZL () 0
ri
2 ri
-2
xi 0 400 -4 400
440
480
f (MHz)
520
440
480
f (MHz)
520
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th = 25 C; Rth mb-h = 0,2 K/W; class-B operation.
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th = 25 C; Rth mb-h = 0,2 K/W; class-B operation.
Fig.9 Input impedance (series components).
Fig.10 Load impedance (series components).
handbook, halfpage
10 Gp 8
MDA350
(dB)
6
4
2
0 400
450
500
550
f (MHz)
600
Typical values; VCE = 12,5 V; PL = 60 W; f = 400 to 512 MHz; Th = 25 C; Rth mb-h = 0,2 K/W; class-B operation.
Fig.11 Power gain versus frequency.
March 1986
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLU60/12
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1986
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU60/12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1986
10

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